Technical information
Main application: Deposition thin high-k oxide layers
Materials: HfO2, ZrO2, Al2O3
8" max wafer diameter
The ALD is equipped with a plasma-head that allows the used of O2 and N2 plasma.
4 precursors currently installed:
- Hafnium (Cp-Hf, Booster).
- Zirconium (Cp-Zr, Booster).
- Water.
- Aluminum (TMA)
Tool Overview
Responsible: Harald Havir, André Andersen
Location: Q256: Aixtron 200 / XRD
License and Booking Required: Yes
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